WebOur transport studies indicate a hole mobility that reflects the structural anisotropy of phosphorene and complements n-type MoS 2. At room temperature, our few-layer phosphorene field-effect transistors with 1.0 μm channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm 2 /V·s, and an on/off ratio of up … Web19 de jul. de 2024 · When deposited with lower work function metal of Al, the peak hole mobility of GaSb NWFET can be enhanced to as high as ≈3372 cm 2 V −1 s −1, showing three times than the un-deposited one. The as-studied metal-semiconductor junction is also efficient for the hole mobility enhancement of other p-channel devices, such as GaAs …
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Purely organic 4HCB single crystals exhibiting high hole mobility …
Web1 de fev. de 2006 · Fluorene derivatives having electron-releasing carbazole and diphenylamino substituents were demonstrated to possess high hole mobility at the level of 10−3 cm2V−1sec−1 in their amorphous films from the time-of-flight measurement; for the fluorene derivative with carbazole substituent, μ = 3.1 × 10−3 cm2V−1sec−1 at an … WebAdvanced high-strength steel tailor welded blanks (AHSS-TWBs) X. Wu, in Tailor Welded Blanks for Advanced Manufacturing, 2011 6.2.5 Ferritic–bainitic (FB) steels. FB steels have improved edge stretch capability and thus sometimes called stretch flangeable (SF) or high hole expansion (HHE) steels. FB steels have a microstructure of fine ferrite and bainite. WebThe IHP TFTs based on the tailored cubic-CsPbI 3 show high hole mobility of ≈10 cm 2 V −1 s −1, an on-off current ratio of 10 3, and a low subthreshold swing voltage of 0.43 V dec −1. In addition, the operational stability of the fabricated device is demonstrated through … black cherry marg